Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: Poster: Organic electronics and photovoltaics (CPP; jointly with HL, O)

HL 65.20: Poster

Mittwoch, 13. März 2013, 16:30–18:30, Poster C

Interface trap density investigation by impedance spectroscopy of MIS structures for different surface treatments — •Hippolyte Hirwa, Steve Pittner, and Veit Wagner — Jacobs University bremen,Campusring 1, D-28759 Bremen, Germany

For high performance electronic devices, reliability and stability are crucial parameters. Since reliabilities and stabilities issues in field effect transistors are mainly related to the semiconductor-gate insulator interface properties, a MIS (Metal-insulator-semiconductor) capacitor structure can be equally used for investigation of interface traps. We report on impedance measurements carried out on MIS capacitors fabricated using silicon oxide as insulator prepared under 3 different surface treatments and poly(3-hexylthiophene) as semiconductor. The conductance technique was used to extract the interface trap density. For this a proper equivalent circuit for our MIS structures had to be chosen. The results reveal first the formation of a double layer with 2 different conductivities in the semiconductor layer, secondly the presence of interface trap states and finally they show that the interface states density and energy distribution is related to the sample surface treatment.