Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 66: GaN: Preparation and characterization of rods and wires

HL 66.1: Vortrag

Mittwoch, 13. März 2013, 17:00–17:15, H15

Hybrid inorganic/organic GaN-based nanowire structures for Förster resonant energy transfer — •Johannes Zettler, Sergio Fernández-Garrido, Oliver Brandt, Lutz Geelhaar, and Henning Riechert — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

The fabrication of hybrid GaN/organic semiconductor systems may facilitate combining the individual material`s strength while compensating for their deficits. Förster resonant energy transfer (FRET) can be used to transfer energy from electrically injected carriers in GaN to an organic semiconductor overlayer, where light is generated more efficiently. Since FRET relies on dipole-dipole coupling, the separation between the GaN active region and the organic overlayer cannot be greater than a few nm. Thus, the use of GaN nanowires (NWs), where the side facets of the GaN active region can be covered with an organic semiconductor, may be an approach superior to planar structures as it permits both efficient electrical contacting and proximity of the GaN active region and the organic semiconductor. In this work, GaN and (Al,Ga)N/GaN NW heterostructures were grown by molecular beam epitaxy to study the FRET process in these hybrid systems. In a first stage, the growth and morphology of self-induced (Al,Ga)N NWs was optimized with respect to the FRET demands. Hence, thin, well separated NWs were grown with quantum disks extended over the whole diameter of the NWs. In a second stage, the spin-coating parameters for filling up the NWs with organic molecules were optimized to achieve a complete coverage of the GaN active region by organic molecules.