Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 66: GaN: Preparation and characterization of rods and wires

HL 66.6: Vortrag

Mittwoch, 13. März 2013, 18:15–18:30, H15

MOVPE Growth of Position-Controlled InGaN / GaN Core-Shell Nanorods — •Martin Mandl^1,2, Tilman Schimpke¹, Michael Binder¹, Bastian Galler¹, Xue Wang², Johannes Ledig², Milena Ehrenburg², Hergo-Heinrich Wehmann², Andreas Waag², Xiang Kong³, Achim Trampert³, Hans-Jürgen Lugauer¹, and Martin Strassburg¹ — ¹Osram Opto Semiconductors GmbH, Regensburg — ²Institut für Halbleitertechnik, TU Braunschweig — ³Paul-Drude-Institut für Festkörperelektronik, Berlin

Core-shell group III-nitride nano- and microrods (NAMs) enable a significant increase of the active layer area by exploiting the non-polar side facets (m-planes) and thus can potentially contribute to mitigating the so-called efficiency droop in LEDs.

GaN NAMs exhibiting high aspect ratios were grown in a production-type MOVPE system. Low V/III ratio, hydrogen-rich carrier gas mixture and surfactants supported the 3D growth of the pencil-shape n-type GaN core. Desired narrow distributions of shape, diameter and height were achieved. The arrangement of the NAMs was controlled by patterns etched into SiO₂ masks deposited on GaN templates. The active layer (InGaN/GaN SQW and MQWs) and the layer for the p-side were deposited with 2D-like conditions wrapped around the core. The crystalline quality of the NAMs, shell growth rates and the Indium distribution were investigated by high resolution transmission electron microscopy. Furthermore, optical emission was studied using density-dependent photoluminescence spectroscopy.