Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 66: GaN: Preparation and characterization of rods and wires
HL 66.9: Talk
Wednesday, March 13, 2013, 19:00–19:15, H15
Germanium doping of self assembled GaN nanowires grown by plasma assisted molecular beam epitaxy — •Pascal Hille1, Paula Neuderth1, Jörg Schörmann1, Markus Schäfer1, Jan Müßener1, Pascal Becker1, Matthias Kleine-Boyman2, Marcus Rohnke2, Maria de la Mata3, Jordi Arbiol3, Detlev M. Hofmann1, Thomas Sander1, Peter J. Klar1, Jörg Teubert1, and Martin Eickhoff1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany — 2Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Germany — 3ICREA and Institut de Ciencia de Materials de Barcelona,CSIC, Campus de la UAB, 08193 Bellaterra, CAT, Spain
For realization of nanowire (NW) based nano-optical or nano-electronic devices, doping is a crucial issue. Up to now the use of Si-donors prevented a systematic study of the NW electronic properties as a function of the doping-concentration due to changes in the NW morphology during growth and difficulties in quantifying the Si-doping concentration [Si]. Here, we investigate Ge as an alternative dopant. Self assembled GaN:Ge NWs were grown by PAMBE on Si(111) substrates. Time of flight secondary ion mass spectrometry revealed a homogenous Ge distribution along the NW growth direction and a linear dependence of [Ge] on the Ge-flux with a maximum [Ge] of 3· 1020 cm−3. The influence of the Ge incorporation on the morphology was analyzed by SEM and TEM. Low temperature PL shows strong and sharp emission even at the highest [Ge]. A linear increase of conductivity with increasing [Ge] was obtained by single wire electrical measurements.