Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO₂, Ga₂O₃, and In₂O₃ for novel devices

HL 67.6: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

CVD of Epitaxial SnO2 Films grown on c-cut and r-cut Sapphire by SnI2/O2 Precursor — •Yinmei Lu, Gunther Haas, Melanie Pinnisch, Philipp Hering, Martin Becker, Johannes Bieber, and Bruno Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

Thin films of SnO2 have been successfully deposited by CVD using SnI2 powder and O2 as precursor combination. Depositions were carried out at different temperatures (400 - 700 °C) on (001) c-cut and (10-12) r-cut sapphire. Analysis using X-Ray diffraction (XRD) revealed that SnO2 (200) was dominantly grown on c-cut sapphire, but on r-sapphire SnO2 films were strongly (101) oriented. Surface morphology and the dependence of electronic properties on oxygen partial pressures were investigated with scanning electronic microscope/atomic force microscope (SEM/AFM) and Hall measurements, respectively. The absolute average transmittance of the films in the visible and infrared range exceeds 90%. The band gap of the obtained SnO2 films is about 4.2 eV. Optical properties were investigated using low temperature photoluminescence (PL) measurements.