Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices
HL 67.7: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Investigation of the Rutile Structure on the Semiconductor Oxides SnO2 Doped with Fe by the Perturbed Gamma-Gamma Angular Correlation Spectroscopy — •Juliana Marques Ramos1, Thiago Martucci2, Artur Wilson Carbonari2, and Reiner Vianden1 — 1Helmholtz-Institut für Strahlen- und Kernphysik — 2Instituto de Pesquisas Energéticas e Nucleares
In the present work the perturbed gamma-gamma angular correlation (PAC) spectroscopy was used to measure hyperfine interactions in the rutile structure of semiconducting SnO2 [1] thin films doped with Fe. The motivation for this study is that both oxides are candidates for diluted magnetic semiconductor in the emerging area of spintronics [2]. The thin films were deposited by sputtering on Si (100) substrate with an applied magnetic field of 500 G. The thicknesses were 100 nm. The implantation of 111In(111Cd) was made into the films at the Bonn Isotope Separator (BONIS) at the University of Bonn. The thermal treatment for the samples was done for 10 minutes at 873 K in vacuum for TiO2 and in air for the SnO2. PAC results are compared with ab-initio first principles calculations [3] and show a week magnetic interaction for the rutile site, what confirms the results of our previous [4] work for thin films as well. REFERENCES [1] J. M. Ramos et al, Hyp. Int., 197 (2010) 239. [2] J. M. D. Coey, New J. of Phys. 12 (2010) 053025. [3] L. A. Errico, G. Fabricius, and M. Rentería, Phys. Stat. Sol. (b) 241 (2004) 2394. [4] J. M. Ramos et al, Phys. Proc., 28 (2012) 90.