Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO₂, Ga₂O₃, and In₂O₃ for novel devices

HL 67.8: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

Electronic properties of Si-doped (Ga,In)₂O₃ PLD thin films — •Marcus Purfürst, Stefan Müller, Zhipeng Zhang, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany

The wide bandgap oxide semiconductor β-Ga₂O₃ (E_g = 4.9 eV at RT) is a promising material for the realization of solar-blind photodetector applications like flame detection or missile warning systems. In order to tune the onset of the photo response as desired we investigated in a first step the incorporation of In into the Ga₂O₃ matrix and the change of the bandgap in dependence on the incorporated In content. The Si-doped (Ga,In)₂O₃ thin films were grown by pulsed laser deposition on c-plane sapphire substrates. Thin films grown at 730 ^∘C from a Ga₂O₃ target containing, for example, 1wt.% SiO₂ and 2wt.% In₂O₃ are single crystalline with (-2 0 1)-orientation for oxygen growth pressures (p_O2) up to 2×10⁻³ mbar. For higher p_O2 polycrystalline thin films are obtained. According to the Hall measurements the conductivity shows a maximum of 63 S/m at a growth pressure of 2×10⁻³ mbar. The absorption edge decreases with increasing p_O2 from 4.8 eV to 4.65 eV in the investigated pressure range. Compared to binary β-Ga₂O₃ thin films, In₂O₃ leads to an increased conductivity and a reduction of the optical band gap.