HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices
Wednesday, March 13, 2013, 16:00–20:00, Poster A
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16:00 |
HL 67.1 |
Properties of tin oxides prepared by Ion-Beam-Sputtering — •Martin Becker, Robert Hamann, Angelika Polity, Davar Feili, and Bruno K. Meyer
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16:00 |
HL 67.2 |
Ab-initio investigation of various tin oxides — •Bianca Eifert and Christian Heiliger
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16:00 |
HL 67.3 |
Structural properties and defect-induced conduction mechanism in spinel-type ferrites — •Kerstin Brachwitz, Michael Lorenz, and Marius Grundmann
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16:00 |
HL 67.4 |
Low Rate Deep Level Transient Spectroscopy: A new method for detecting deep levels in wide gap semiconductors — •Rainer Pickenhain, Florian Schmidt, Otwin Breitenstein, Holger von Wenckstern, and Marius Grundmann
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16:00 |
HL 67.5 |
ZnFe2O4 dielectric function — •Tammo Böntgen, Kerstin Brachwitz, Rüdiger Schmidt-Grund, Michael Lorenz, and Marius Grundmann
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16:00 |
HL 67.6 |
CVD of Epitaxial SnO2 Films grown on c-cut and r-cut Sapphire by SnI2/O2 Precursor — •Yinmei Lu, Gunther Haas, Melanie Pinnisch, Philipp Hering, Martin Becker, Johannes Bieber, and Bruno Meyer
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16:00 |
HL 67.7 |
Investigation of the Rutile Structure on the Semiconductor Oxides SnO2 Doped with Fe by the Perturbed Gamma-Gamma Angular Correlation Spectroscopy — •Juliana Marques Ramos, Thiago Martucci, Artur Wilson Carbonari, and Reiner Vianden
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16:00 |
HL 67.8 |
Electronic properties of Si-doped (Ga,In)2O3 PLD thin films — •Marcus Purfürst, Stefan Müller, Zhipeng Zhang, Holger von Wenckstern, and Marius Grundmann
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16:00 |
HL 67.9 |
Fabrication and characterization of thin β−Ga2O3 samples — •Srujana Dusari, Christine Bülow, Saskia F. Fischer, Zbigniew Galazka, and Martin Albrecht
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16:00 |
HL 67.10 |
The Seebeck coefficient of In2O3 - Inferences on causes of unintentional conductivity and electron effective mass — Natalie Preissler, •Oliver Bierwagen, Ashok T. Ramu, and James S. Speck
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