Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.10: Poster
Wednesday, March 13, 2013, 16:00–20:00, Poster A
Dislocation related luminescence properties in multiple InGaN quantum well structures — •Manuel Frey1, Ingo Tischer1, Matthias Hocker1, Dario Schiavon2, Matthias Peter2, and Klaus Thonke1 — 1Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89081 Ulm — 2OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany
The development of InGaN/GaN quantum well structures during the last years resulted in green LEDs with high quantum efficiency.
The indium content and the strain in the InGaN layers increases with the growing number of QWs. Among others, the density of threading dislocations and stacking faults increases leading to V-pit formation when a critical thickness of the QWs is exceeded.
Spatially and spectrally resolved low voltage cathodoluminescence measurements on multiple InGaN/GaN based QWs allow to determine the effect of dislocations and strain on the luminescence properties of multiple QW samples.