Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.13: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

Epitaxial growth of smooth GaAs layers on non-miscut GaAs (111)A and GaAs (111)B substrates — •Julian Ritzmann¹, Rüdiger Schott¹, Dirk Reuter², Arne Ludwig¹, and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum — ²Arbeitsgruppe für optoelektronische Materialien und Bauelemente, Universität Paderborn

(111)A and (111)B oriented GaAs is known for their large piezoelectric effect and light emitting efficiency. Also, these surfaces allow for highly anisotropic etching. The growth by molecular beam epitaxy on these surfaces is however rather challenging and only a limited range of growth parameters leads to smooth layers.

In this work we investigate conditions for the MBE growth of GaAs layers on GaAs (111)A and (111)B substrates without miscut. The samples were grown under different III/V-ratios, different substrate temperatures and growth rates. Atomic force and scanning electron microscopy were used for imaging the surface morphology and photoluminescence measurements were performed to study the optical properties of our samples.