Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.14: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

Effects of substrate temperature and annealing on structural properties of GaP/Si(100) grown by gas-source molecular-beam epitaxy — •Emad Hameed Hussein, Shabnam Dadgostar, Fariba Hatami, and W. Ted Masselink — Department of Physics, Humboldt Universtät zu Berlin, Newtonstrasse 15, D-12489 Berlin, Germany

Gallium phosphide (GaP) was grown epitaxially on silicon (100) substrates using gas-source molecular-beam epitaxy. In this study, two growth methods are compared: one-step and two-step growth. In the case of one-step growth, the GaP was grown directly onto the desorbed Si surface at a single substrate temperature between 250°C to 550°C, followed by thermal annealing. In two-step growth, the GaP includes two layers grown at different temperatures. The differences between these methods as well as the effects of growth and annealing temperatures on crystal structure were studied using X-ray diffraction measurements and scanning electron microscopy. Samples grown in two steps method show a better surface quality compared with that grown by one-step. A structurally coherent crystalline GaP layer, on the other hand, was successfully grown by two-step method, as confirmed by asymmetric x-ray curves.