Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.16: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Impact of growth temperature on the interface quality of AlP/GaP superlattices grown using gas-source molecular-beam epitaxy — •Shabnam Dadgostar, Fariba Hatami, and William.Ted Masselink — Department of physics, Humboldt-Universität zu Berlin, Newtonstrasse 15, D-12489 Berlin, Germany

High-Q optical cavities in GaP can be realized by incorporating epitaxially grown AlP/GaP Bragg reflectors. Such Bragg reflectors can be prepared as single crystals using gas-source molecular-beam epitaxy, growing the distributed Bragg reflectors adjacent to an active region for optical emission. Electrical transport through such structures depends critically on the interface roughness between the AlP and GaP layers. We have studied the effect of growth temperature on the interface roughness and found the optimum temperature for growth of AlP/GaP superlattice on GaP (100) substrate. For our applications we used structures with AlP and GaP layer thicknesses of 48 and 40 nm. Both scanning electron microscopy and high-resolution x-ray diffraction measurements indicate that interface roughness is minimized for a growth temperature of 450°C.