Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.17: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Bandgap engineering of GaAs by ion-implantation and flash lamp annealing — •Kun Gao, Slawomor Prucnal, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P. O. Box 510119, Dresden 01314, Germany

Gallium arsenide based materials have outstanding performances in light-emitting devices in virtue of their remarkable efficiency and thermal stability.

In this contribution we present the successful doping of N, P, Bi, and In into GaAs lattice. First the dopant atoms are implanted into the GaAs wafers. After implantation, the GaAs wafer becomes amorphous within the as-implanted range. Post thermal annealing restores the initial properties of the matrix and leads to formation of the GaAs:X (X:dopants) layers. The optical properties were investigated by μ-Raman spectroscopy, temperature dependence photoluminescence. By N-doping we have successfully narrowed the bandgap. From Bi and In doped GaAs we obtain a strong luminescence peaking at 1.3 μm. On the other hand, Zn-doping has suppressed such luminescence. It is also noticeable that the 1.3 μm light emission only have a slight redshift (about 20 nm) and 60% intensity decline as the temperature rises from 20 K to room temperature. Our investigation suggests that after flash lamp annealing GaAs based materials exhibit a promising prospect on applications of light emitters and detectors, especially for optical communication devices.