Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.18: Poster
Wednesday, March 13, 2013, 16:00–20:00, Poster A
Treatment of light emitting equipment on the base of III-V semiconductive compound for information visual reflection systems — •Ia Trapaidze1, Maia Jgenti1, Lia Trapaidze2, and Gela Goderdzishvili1 — 1Dep. of Physics, Georgian Technical University, 77 Kostava Ave. IV block, 0175, Tbilisi, Georgia — 2Dep. of Physics, Tbilisi State University, 3 Chavchavadze Ave., 0179 Tbilisi, Georgia
This work includes new methods of treatment and optimization technological processes of light emitting equipment on the base of III-V semiconductive compound. By using local rust thermal method we created high effective light emitting integral scheme. Also was fulfilled new type of integral scheme in the different area of visible spectrum. For made equipment we investigated spectraphotometrical and electro physical parameters. In future we plan to create structures working little consumption current with light radiation elements and will make different configuration semiconductive indicators on the base of these structures.