Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.19: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Optical gain and lasing in GaNAsP/BGa(As)P heterostructures grown on (001) silicon substrate — •Markus Finkeldey1, Nektarios Koukourakis1, Nils C. Gerhardt1, Martin R. Hofmann1, Martin Zimprich2, Kerstin Volz2, Wolfgang Stolz2, and Bernardette Kunert3 — 1Photonics and Terahertztechnology, Ruhr-Universität Bochum, Germany — 2Material Science Center and Faculty of Physics, Philipps-University Marburg, Germany — 3NAsP III/V GmbH, Marburg, Germany
The realization of electrically pumped lasers on silicon is a huge challenge on the way to optoelectronic integrated circuits. One approach is the heteroepitaxial growth of direct band gap III/V semiconductors on indirect Si. However, the large lattice mismatch between III/V materials and Si leads to a formation of high misfit and threading dislocation densities, reducing the efficiency and lifetime of the lasers dramatically. The dilute nitride material GaNAsP is a very promising candidate to overcome these obstacles. Due to its direct band gap and its capability for lattice matched growth on (001) silicon substrate, GaNAsP is perfectly qualified as an active material for lasers on silicon. Here we investigate gain and temperature dependent lasing in optically pumped GaNAsP/BGa(As)P heterostructures grown on silicon substrate. We obtained high modal gain values at room temperature comparable to the values in common III-V laser materials. However the observed strong dependence of the laser threshold on excitation wavelength indicates significant carrier leakage, which has to be suppressed in order to increase the efficiency in electrically pumped devices.