Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.2: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Whispering gallery modes in GaN micro- and nanorods by metal-organic vapor phase epitaxy — •Christian Tessarek1,2, George Sarau1, and Silke Christiansen1,3 — 1Max-Planck-Institut für die Physik des Lichts, Erlangen — 2Institut für Optik, Information und Photonik, Universität Erlangen-Nürnberg — 3Institut für photonische Technologien, Jena
Self-assembled catalyst- and mask-free GaN micro- and nanorods on sapphire substrates have been grown by metal-organic vapor phase epitaxy. To obtain these structures a simple three step method was applied consisting of nitridation of the sapphire substrate, deposition of a GaN nucleation layer and growth of GaN rods.
Optical investigations were performed utilizing cathodoluminescence (CL) and photoluminescence (PL). Typical GaN spectra were obtained showing GaN near band edge emission as well as yellow defect band luminescence. In regular hexagonal shaped GaN nano- and microrods whispering gallery modes (WGMs) were observed in the GaN spectra. Q-factors of up to 500 and up to 4000 were measured in CL and PL, respectively.
Further CL investigations will show that the spectral position of the WGMs can be tuned in slighlty tapered GaN nanorods by changing the position of the exposing electron beam. Finally, WGMs were also observed in GaN microrods covered with InGaN quantum wells.