Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.21: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Time-resolved luminescence studies of rare earth doped III-nitrides grown at high temperature and high pressure — •Oliver Beck¹, Tristan Koppe¹, Takashi Taniguchi², Hans Hofsäss¹, and Ulrich Vetter¹ — ¹2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen — ²National Institute for Materials Science, Namiki 1 - 1, Tsukuba, Ibaraki 305-0044, Japan

We report on luminescence studies of rare earth doped III-nitrides that are synthesized under high temperature and high pressure conditions. The samples are excited with a femtosecond laser system at various wavelengths between 193nm and 1000 nm and the luminescence is collected with a Streak Camera at different time scales in the wavelength range 200-800 nm at room temperature. A special focus is drawn on rare earth doped 2H-AlN as a high power laser material, with a comparison to rare earth doped boron nitride.