Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers
HL 68.3: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
DBR for 3D-GaN-LEDs — •Jana Hartmann1, Lorenzo Caccamo1, Stephan Merzsch1, Xue Wang1, Martin Thunert2, Helena Franke2, Rüdiger Schmidt-Grund2, Hergo-Heinrich Wehmann1, Marius Grundmann2, and Andreas Waag1 — 1Technische Universität Braunschweig, Institut für Halbleitertechnik, Hans-Sommer-Str. 66, 38106 Braunschweig — 2Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig
Until now a lot of efforts have been made to achieve low-cost and efficient white LEDs. A relatively new approach is based on micro or nano three dimensional (3D) pillars. We propose to use 1D-Bragg reflectors (DBR) as backside mirror for enhancement of the forward emission of these 3D-LEDs based on GaN/InGaN MQW.
Nanorods with diameter smaller than 200 nm are used as a core to provide a sufficient large evanescent part of the light wave allowing a high interaction between LEDs and the surrounding. To produce such small structures nanoimprint lithography and colloidal lithography are tested.
The DBR layer pairs are composed of yttria stabilized zirconia and Al2O3 deposited on sapphire substrates by using pulsed laser deposition. In order to grow nanorods on the sapphire, holes have to be etched into the bottom DBR structure by inductively coupled plasma etching.
First results of lithography, etching process and subsequent metal-organic vapour-phase epitaxial growth of n-doped GaN cores will be presented.