Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.9: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

Investigations of electrolyte/ group-III-nitride interfaces with electrical methods — •Martin Gottschalk, Hartmut Witte, Armin Dadgar, and Alois Krost — Otto-von-Guericke-Universität Magdeburg, Institute of Experimental Physics, MB 4120,39016 Magdeburg

Group-III-nitride materials are well established for detecting chemicals, gases, biological and radiation releases as well as for local stimulation of chemical or biological reactions. Hereby, the electronic properties of the surfaces control the interaction with the different atmospheres and liquids. Therefore, for any application of group-III-nitrides as sensors or actuators these interfaces must be investigated in detail to enable a control of their properties. We focused our investigations on the interface between different group-III-nitride materials such as p-type and n-type GaN, AlGaN, InGaN and InAlN with electrolytes containing chlorine ions. The measurements include cyclic voltammetry and electrochemical impedance- and CV-spectroscopy. To characterize the semiconductor surfaces before contacting with electrolytes we used Hall-effect measurements and CV-characteristics and surface scanning potential spectroscopy. In a systematic study for all investigated materials the redox potentials and the potentials for the hydrogen production were given as well as results of the surface carrier concentrations.