Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 69: Poster Session: II-VI semiconductors; Organic semiconductors; Heterostructures

HL 69.11: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Influence of the presence of residual gases during sample fabrication on the performance and lifetime of OLEDs — •Florian Wölzl¹, Ines Rabelo de Moraes², Björn Lüssem¹, Karl Leo¹, and Malte C. Gather¹ — ¹Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden, Germany — ²Institut für Photonische Technologien Jena Albert-Einstein-Straße 9 07745 Jena

Due to their application potential in lighting and display technology, organic light emitting diodes (OLEDs) have been attracting considerable attention. However, the lifetime of these devices is still a bottleneck for a broad application of the technology. Revealing the degradation processes, especially the chemical degradation is of great interest. In particular the processing conditions, such as the amount of residual gases during the deposition of the materials might have considerable influence. To manipulate their partial pressures during evaporation, a needle valve was added to the processing chamber which can be connected to a nitrogen or oxygen gas bottle as well as to a water-filled gas-washing bottle. This allows us to intentionally contaminate the chamber with these gases. The devices are prepared under a base pressure of 5· 10 ^-6 to 10^-8 mbar. In this work we will focus separately on the influence of nitrogen oxygen and water during the OLED preparation on the performance and lifetime of a p-i-n OLED based on the stable red triplet emitter tris(1-phenylisoquinoline) iridium(III) (Ir(piq)₃). By LDI-TOF-MS technique, the chemical degradation processes of an electrically driven OLED are investigated.