Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 69: Poster Session: II-VI semiconductors; Organic semiconductors; Heterostructures

HL 69.20: Poster

Wednesday, March 13, 2013, 16:00–20:00, Poster A

The band alignment of the cuprous and cuprite oxide — •Benedikt Kramm, Philipp Hering, Daniel Reppin, Angelika Polity, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

In recent work we showed the band alignment for the heterostructures of cuprous oxide, gallium nitride and zinc oxide. We found a conduction band offset (CBO) value of 0.97 eV for Cu₂O/ZnO and 0.24 eV for Cu₂O/GaN [1]. The low conduction band offset of Cu₂O/GaN making GaN a more suitable candidate for the front contact of Cu₂O based solar cells. Now we investigated heterostructures of CuO/GaN and CuO/Cu₂O. Details about the copper oxide thin films can be found here [2]. We analyzed the photoelectron characteristics of the heterostructures, on the surface and in the depth, and out of this we determined the band alignment of the copper oxide phases among each other and to gallium nitride and zinc oxide.
[1] B. Kramm et al., Appl. Phys. Lett. 100, 094102 (2012), DOI: 10.1063/1.3685719

[2] B.K. Meyer et al., Phys. Status Solidi B, 1-23 (2012), DOI: 10.1002/pssb.201248128