Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 69: Poster Session: II-VI semiconductors; Organic semiconductors; Heterostructures

HL 69.5: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Bandgap engineering in Cd_xZn_1−xTe ternary alloy nanowires — •Nazli Kheirabi¹, Keivan Davami¹, Mehrdad Shaygan¹, Judith Pohl², Giovanni Cuniberti^1,2, Jeong-Soo Lee¹, and Meyya Meyyappan^1,3 — ¹Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, 790-894, Korea — ²Institute for Materials Science, Dresden University of Technology, D-01062, Dresden, Germany — ³NASA Ames Research Center, Moffett Field, CA, USA

Herein, we report Au catalyzed vapor-liquid-solid growth and band gap engineering of single-crystalline alloy Cd_xZn_1−xTe nanowires where a continuous tuning of x value (0<x<1) and desired nanowire composition were achieved by a precise substrate temperature control. A full investigation of the characteristics of our nanowires such as their morphology, crystal structure, lattice constant and composition was conducted by analyzing SEM and EDS results, TEM images, XRD patterns, Raman and photoluminescence (PL) spectra, and a monotonic increase in the Cd proportion in the alloy composition was confirmed. Near band gap peaks in PL spectra of alloy nanowires revealed a continuous decrease in energy bands from 2.24 eV to 1.52 eV when moving from ZnTe towards CdTe composition. The outcome of this work opens up new frontiers in the field of tunable band gap emission nano photonic devices operating in the range of visible to new infrared regions.