Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge

HL 70.1: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Solution processed doped zinc oxide field-effect transistors on flexible substrates — •Florian Mathies^1,2, Sebastian Hietzschold^1,2, Wolfgang Kowalsky^1,2,3, Uli Lemmer⁴, and Norman Mechau^2,4 — ¹Kirchhoff-Institut für Physik, Universität Heidelberg, Germany — ²InnovationLab, Heidelberg, Germany — ³Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Germany — ⁴Light Technology Institute, Karlsruhe Institute of Technology, Germany

In order to build efficient printed inorganic electronic devices, solution processable semiconductors and adequate fabrication techniques are required. Metal oxides have been considered a promising material because of their excellent electrical performance and stability, in addition to good solubility and printability. In this work, soluble zinc oxide precursor systems doped with aluminium or tin (AZO, ZTO) are used to fabricate field-effect transistors (FETs) in top- and bottom gate configuration. The bottom gate FETs are prepared on top of thermally oxidized doped silicon wafers. For the top gate configuration flexible glass-substrates with a polymer dielectric were used. The characteristics of the devices are found to be strongly affected by material- and process parameters which correlate to differences in the layer morphology and the charge carrier concentration.