Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.13: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Influence of surface treatment on NV centers in diamond — •Lina Elbers1, Aniela Scheffzyk1, Daniel Laumann1, Christian Klump1, Sani Noor1, Sébastien Pezzagna2, Jan Meijer2, and Ulrich Köhler1 — 1Experimentalphysik IV, AG Oberflächen, Ruhr-Universität Bochum — 2RUBION, Ruhr-Universität Bochum
Color centers in diamond especially NV centers are practical single photon emitters due to RT operations and candidates for applications in quantum computing. The implantation of NV centers near the surface for a possible electrical addressing is still a problem. Therefore, we survey the influence of different surface and bulk treatments on the diamond and the NV centers. To purify the diamonds we reduced the amount of natural NV centers in optical grade diamonds by heating up to 1500 ∘C in hydrogen. The intensity of their luminescence could be reduced down to 1/8. In one set of the experiments we deposited silicon on the diamond to test the influence on the luminescence spectra and the charge states. The spectra show that the Si only influences the overall intensities. The H-termination in contrast seems to be practical for the manipulation of the charge state. Hence the diamond surface was treated by an H2 plasma under varying parameters until the diamond becomes conductive. HREELS and AFM measurements were made to test the surface after the plasma treatment. The influence of an Al2O3 passivation layer that was deposited by sputtering on the conductivity was investigated. Additionally, a UHV chamber is modified to implant directly under UHV conditions and to allow in situ spectroscopic access to the diamond samples.