Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.2: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Optimization of (Mg,Zn)O-based thin-film transistors with high-k WO3 dielectric gates — •Anna Reinhardt, Michael Lorenz, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Semiconductor Physics Group
Recently, room-temperature deposited tungsten trioxide (WO3) was demonstrated to be an advantageous high-k gate dielectric for transparent metal-insulator-semiconductor field-effect transistors (MISFETs) with large on/off-current ratios and low gate-voltage sweeps [1].
We present our results on the optimization of WO3-gated thin-film transistors deposited on (Mg,Zn)O-channel material by pulsed-laser deposition. The gate dielectric thickness was varied in order to minimize the subthreshold slope and leakage currents. Furthermore, results on the reduction of the (Mg,Zn)O-channel thickness and its impact on the turn-on voltage will be presented. In combination with Pt as gate metal normally-off transistors were realized. In addition, we investigated the long-term stability of the transfer characteristics of unpassivated devices in comparison to passivated transistors.
[1] M. Lorenz et al., Adv. Mater. 23, 5383-5386 (2011)
[2] M. Lorenz, A. Reinhardt et al., Appl. Phys. Lett. 101, 183502 (2012)