Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.3: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Comparison of ZnO-based JFETs, MESFETs and MISFETs — •Fabian J. Klüpfel, Friedrich L. Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Linnéstr. 5, 04103 Leipzig
We compare the device characteristics of field-effect transistors (FETs) based on ZnO. From the same ZnO thin film, junction FETs with ZnCo2O4-based gates, metal-semiconductor FETs with reactively sputtered Pt Schottky contacts and metal-insulator-semiconductor FETs with WO3 as gate insulator were fabricated. By using a common thin film for the channel, the influence of the different gate architectures on the device performance can be distinguished from other fabrication-induced factors. Similar operation voltages for all FET types support the comparability of the devices. The transistors were characterized electrically by dc measurements at room and elevated temperatures and by frequency-dependent measurements. It was found, that the transfer curves of all devices exhibit a shift towards positive gate voltages with increasing temperature. This is in contrast to other semiconductors, e.g. InGaZnO or a-Si, and is attributed to the ZnO channel material. Several differences in the device characteristics were observed, which make the device types suitable for different fields of application.