Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.4: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Transparent, highly rectifying p-CuI/n-ZnO heterojunctions — •Friedrich-Leonhard Schein, Holger von Wenckstern, and Marius Grundmann — Institut für Experimentelle Physik II, Abt. Halbleiterphysik, Universität Leipzig, Germany
We investigated the wide bandgap (Eg=3.01 eV [1]) p-type semiconductor γ-copper(I)-iodide (CuI) [2] as an alternative candidate to p-type transparent semiconducting oxides like SnO [3] or ZnCo2O4 [4]. Our method to transform dc-sputtered Cu into CuI is easy to handle and uses temperatures below 120 ∘C. Hall-effect measurements of these CuI films on glass substrates revealed a hole mobility of about 6 cm2/Vs, a hole density of 5×1018 cm−3 and a resistivity of 0.2 Ωcm. Atomic force microscopy and optical transmission measurements will be discussed.
Heterostructures consisting of p-CuI and pulsed-laser deposited n-ZnO were fabricated on a-sapphire substrates and characterized electrically. The diodes showed rectification ratios Ion/Ioff > 107 at ± 2 V. Capacitance-voltage and temperature-dependent current-voltage measurements were analyzed to obtain a clear understanding of the diode characteristics.
[1] B.-L. Zhu and X. Z. Zhao, Phys. Status Solidi A 208, 91 (2011).
[2] K. Bädeker, Annalen der Physik textbf327, 749 (1907)
[3] E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010).
[4] F.-L. Schein et al., IEEE Electron Device Lett. 33, 676 (2012).