Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.5: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Synthesis of single crystalline Cu2O nanowires for electrochemically-gated PMOS transistors — Suneeti Purohit1, •Anna Stößer1, Robert Kruk1, Subho Dasgupta1, and Horst Hahn1,2 — 1INT, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, — 2Joint Research Laboratory Nanomaterials, TU Darmstadt, Petersenstr. 32, D-64287 Darmstadt
One-dimensional nanomaterials such as nanorods or nanowires (NWs) are very attractive for various nanoelectronic devices. Cuprous oxide (Cu2O), a well-known p-type semiconductor with a band gap of 2 eV, has cubic crystal structure and is a very good candidate for conversion of solar energy into electrical or chemical energy; optoelectronic or light-emitting devices and as well as for catalysis. We present a low-cost, large scale solution-phase synthesis of single crystalline cuprous oxide NWs that shows very high aspect ratio. Synthesis has been done with hydrothermal treatment of Cu(Ac)2 and pyrrole at 250°C for 5hr. The powder X-ray diffraction (XRD) confirms cubic cuprite structure. Scanning electron microscopy (SEM) images show smooth and straight NWs with minimal surface roughness. The length of most Cu2O NWs exceeds 100 *m, while the diameter varies between 100-150 nm. Fourier transformed infrared spectroscopy (FTIR) and High resolution transmission electron microscopy (HRTEM) has also been performed. Subsequently, the NWs are harvested and used to build low voltage operated, single-nanowire transistors that are gated with composite solid polymer electrolytes; detailed transistor characteristics will also be presented.