Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Poster Session: Devices; Preparation and characterization; C/diamond; Si/Ge
HL 70.9: Poster
Mittwoch, 13. März 2013, 16:00–20:00, Poster A
Production and characterization of ZnO nanorods from various precursors for single- and multi-rod transistors — •Falk von Seggern1,2, Subho Dasgupta1, Robert Kruk1, and Horst Hahn1,2 — 1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany — 2TU Darmstadt and KIT Joint Research Laboratory Nanomaterials, , Petersenstr. 32, 64287 Darmstadt, Germany
There is still a large research interest for ZnO for many applications due to its relatively wide band gap (3.37 eV), its transparency, its high carrier mobility, the easy production and non-toxicity. We present different routes for bulk synthesis (in the gram range) of ZnO nanorods, which are later used for single, as well as multi-nanorod transistor fabrication. Starting from different precursors we vary the process parameters systematically in order to obtain nanorods in bulk amounts and with an optimum morphology for the field-effect device fabrication. Structural characterizations are performed on as-grown nanorods using XRD, SEM and EDX techniques. Initially, devices have been made by structuring with e-beam lithography (in order to define the passive structures) and tested for transistor characteristics thereafter. Further work is in progress to fabricate completely solution processed single or multi nanorod field-effect devices.