HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I
Donnerstag, 14. März 2013, 09:30–13:15, H13
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09:30 |
HL 72.1 |
Topical Talk:
Defect reduction methods for GaN heteroepitaxial films grown along semipolar orientations — •Philippe Vennéguès
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10:00 |
HL 72.2 |
Topical Talk:
Identification of defects in semipolar GaN and (Al,Ga,In)N by cathodoluminescence spectroscopy — •Klaus Thonke, Ingo Tischer, Matthias Hocker, Manuel Frey, and Ferdinand Scholz
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10:30 |
HL 72.3 |
Topical Talk:
Stacking fault elimination in heteroepitaxial semi-polar GaN — •Armin Dadgar
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11:00 |
HL 72.4 |
Enhanced stacking fault induced indium diffusion on semipolar gallium nitride based ridges — •Matthias Hocker, Ingo Tischer, Klaus Thonke, Junjun Wang, Robert A.R. Leute, Ferdinand Scholz, Johannes Biskupek, Willem van Mierlo, and Ute Kaiser
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11:15 |
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Coffee break
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11:30 |
HL 72.5 |
Topical Talk:
Strain and Relaxation in Nonpolar and Semipolar GaN-based LEDs and Laser Diodes — •Kathryn Kelchner, Shuji Nakamura, Steven DenBaars, and James Speck
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12:00 |
HL 72.6 |
Topical Talk:
Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy — •Kazuyuki Tadatomo, Keisuke Yamane, Narihito Okada, Hiroshi Furuya, and Yasuhiro Hashimoto
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12:30 |
HL 72.7 |
Optical properties of MBE grown cubic AlGaN/GaN double quantum well structures — •Tobias Wecker, Christian Mietze, Dirk Reuter, and Donat J. As
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12:45 |
HL 72.8 |
InGaN/GaN based semipolar light emitting diodes — •Junjun Wang, Matthias Hocker, Robert Leute, and Ferdinand Scholz
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13:00 |
HL 72.9 |
Epitaxy of Al1−xInxN on different GaN-surface orientations — •Ernst Ronald Buß, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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