Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I

HL 72.1: Topical Talk

Thursday, March 14, 2013, 09:30–10:00, H13

Defect reduction methods for GaN heteroepitaxial films grown along semipolar orientations — •Philippe Vennéguès — Centre de Recherche sur l'Heteroepitaxis et ses Applications, rue Bernard Gregory 06560 VALBONNE FRANCE

Heteroepitaxially-grown semipolar GaN films contain a high density of extended structural defects, mainly basal stacking faults, which prohibit their use for the fabrication of efficient optoelectronic devices. After a short description of the microstructure and of the origin of the crystalline defects, this presentation will focus on a few methods which have been developed to improve the crystalline quality. Thanks to transmission electron microscopy, the behavior of the defects and the mechanisms resulting in the reduction of their density are investigated. Two main efficient defect reduction techniques will be presented: epitaxial lateral overgrowth and growth on inclined facets. Problems encountered in the implementation of such growth techniques and the perspective towards the developments of high quality heteroepitaxial GaN templates will be presented.