Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Extended defects in semi- and nonpolar GaN I

HL 72.3: Topical Talk

Thursday, March 14, 2013, 10:30–11:00, H13

Stacking fault elimination in heteroepitaxial semi-polar GaN — •Armin Dadgar — Institut für Experimentelle Physik, Otto-von Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg

Heteroepitaxially grown semi- and non-polar GaN layers typically suffer from high densities of stacking faults or require elaborate growth techniques as epitaxial lateral overgrowth. Recently a simple method to eliminate stacking faults of the dominant I1 type by the insertion of AlN interlayers in GaN has been demonstrated for GaN layers inclined towards the m-plane. For semipolar GaN layers with different inclination angles X-ray diffraction and TEM studies of GaN / AlN layer stacks show in detail the annihilation of stacking faults, but also the generation of short segments of I2 type stacking faults.