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Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 73: Devices

HL 73.1: Talk

Thursday, March 14, 2013, 09:30–09:45, H15

Does Scaling help making HEMTs faster?Sabbir Ahmed1, Kyle David Holland1, Navid Paydavosi1, Christopher Martin Sinclair Rogers1, Ahsan Ul Alam1, Neophytos Neophytou2, •Diego Kienle3, and Mani Vaidyanathan11Department of Electical and Computer Engineering, University of Alberta — 2Institute for Microelectronics, Technical University of Vienna — 3Theoretische Physik I, Universität Bayreuth

The scaling-down of channels has been the basis to design faster transistors. Particularly III-V high-electron-mobility transistors (HEMTs) have been favored for terahertz applications thanks to their low-effective mass. However, experimentally it is known that the unity-current gain and power-gain cut-off frequencies (fT and fmax) of HEMTs exhibit the tendency to saturate with shorter channel lengths and thus become insensitive to scaling. In this talk we employ a self-consistent, quantum-mechanical NEGF solver to quasi-statically extract the fT of intrinsic III-V devices, focusing on InGaAs and GaN HEMTs with channel lengths of 50 nm down to 10 nm. We show that the non-scaling behavior of HEMTs is a result of short-channel effects (DIBL) leading to a weaker quantum confinement, so that the subbands are positioned lower in energy resulting in a larger-than-expected charge modulation and gate capacitance, respectively. It is also shown that the InGaAs HEMTs have faster fT at long gate lengths, but as a consequence of their lower effective mass, they experience a more rapid fT saturation than the GaN HEMTs, such that the two devices have a comparable fT at very short gate lengths down to 10 nm.

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