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HL: Fachverband Halbleiterphysik

HL 73: Devices

HL 73.2: Vortrag

Donnerstag, 14. März 2013, 09:45–10:00, H15

Structural and magnetic properties of iron on modulation-doped (001) GaAs and on modulation-doped InAs heterostructures — •Boris Landgraf, Taras Slobodskyy, Christian Heyn, and Wolfgang Hansen — Institut für Angewandte Physik, Universität Hamburg, 20355 Hamburg, Germany

We study hybrid structures comprising a ferromagnetic metal layer on III/V compound heterostructures in view of spintronic applications [1]. While iron on modulation-doped (001) GaAs is a well established system [2], corresponding experiments of iron on InAs-HEMTs are not appeared so far. InAs is of high interest because of the low Schottky barrier and strong spin-orbit coupling.
In this talk, I will give an account of the growth and strain relaxation of iron on modulation-doped (001) GaAs and on inverted modulation-doped InAs heterostructures investigated with in-situ reflection high-energy electron diffraction (RHEED). Furthermore, we employed high-resolution X-ray diffraction and magneto-optical Kerr measurements to investigate structural as well as magnetic properties of these structures.
 [1] S. Datta, B. Das, Electronic analog of the electro-optic modulator, Apllied Physics Letters 56, 665-667 (1990)
 [2] X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlid, J. Zhang, K. S. M. Reddy, S. D. Flexner, C. J. Palmstrøm, and P. A. Crowell, Electrical detection of spin transport in lateral ferromagnet-semiconductor devices, Nature Physics 3, 197-202 (2007)