Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 73: Devices
HL 73.3: Vortrag
Donnerstag, 14. März 2013, 10:00–10:15, H15
Interrelation between the Charge Transport and the Electronic Structure of Transparent Printed Metal Oxide Semiconductors — •M. Häming1,2, A. Issanin1,3, P. Pacak1,2, W. Jägermann3, and K. Bonrad1,2 — 1Merck-TU-Darmstadt Laboratories, Darmstadt, Germany — 2Merck KGaA, Darmstadt, Germany — 3Materials Science Department, TU Darmstadt, Germany
Printed Indium-Zinc-Oxide (IZO) and Indium-Gallium-Zinc-Oxide (IGZO) semiconductor thin films have rapidly become of high interest due to recent observations of a surprisingly high field effect mobility (µ > 10 cm2/Vs) in printed IZO and IGZO thin film transistors (TFTs) which opens up the opportunity for high-performance transparent printed electronics. The charge transport and the electronic structure of a systematic series of solution processed IZO thin films with high field effect mobility has been studied with particular focus at the aspects of doping and the energy position of the charge transport states. A consistent picture of the interrelation between the charge transport properties and the electronic structure can be developed by correlating the data from TFT and four-point probe measurements with UV/VIS transmission spectroscopy and photoelectron spectroscopy data.