Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 75: Transport: Spintronics and magnetotransport 1 (TT, jointly with HL, MA)
HL 75.15: Talk
Thursday, March 14, 2013, 13:15–13:30, H18
Graphene quantum dots on hexagonal boron nitride — •Alexander Epping1,2, Stephan Engels1,2, Christian Volk1,2, Jan Dauber1,2, Bernat Terres1,2, Matthias Goldsche1,2, Kenji Watanbe3, Takashi Taniguchi3, and Christoph Stampfer1,2 — 1JARA-FIT and II. Institute of Physics B, RWTH Aachen, 52074 Aachen, Germany — 2Peter-Grünberg-Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
Graphene exhibits unique electronic and mechanical properties making it a promising material for future quantum-electronic applications. However, state of the art graphene quantum dots fabricated on SiO2 substrates suffer from their poor quality due to a large disorder potential. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) substantially reduces the disorder potential because of its atomically-flat graphene-like hexagonal structure. Here, we present the fabrication and characterization of single-layer graphene quantum dots on hBN substrates. In particular we show low-temperature transport measurements showing Coulomb diamonds with charging energies between 9 meV and 11 meV.