Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 79: Focus Session: Frontiers of electronic structure theory VI (O, jointly with HL, TT)

HL 79.7: Talk

Thursday, March 14, 2013, 12:15–12:30, H36

Electron-hole puddles in the absence of charged impurities — •Marco Gibertini^1,2, Andrea Tomadin², Francisco Guinea³, Mikhail I. Katsnelson⁴, and Marco Polini² — ¹Theory and Simulations of Materials, École Polytechnique Fédérale de Lausanne, Station 12, 1015 Lausanne, Switzerland — ²NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy — ³Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain — ⁴Radboud University Nijmegen, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands

It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. In this talk we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy.