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HL: Fachverband Halbleiterphysik

HL 81: Focus Session: Extended defects in semi- and nonpolar GaN II

HL 81.11: Vortrag

Donnerstag, 14. März 2013, 17:45–18:00, H13

Influence of the semipolar GaN template on the charge carrier dynamics in an active InGaN layer — •Jan Wagner, Sarah Schröder, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The growth on semipolar GaN is in the focus of many research studies for several years now since the influence of the Quantum Confined Stark Effect (QCSE) on an active region grown on these planes is significantly reduced. This leads to superior charge carrier dynamics, enhanced emission efficiency and increased indium incorporation with respect to an active region grown on c-plane GaN. As the production of native semipolar substrates with adequate crystalline quality is still difficult and expensive other growth techniques have to be considered. In this work we use the facets of three-dimensional grown GaN pyramids as semipolar templates for active InGaN quantum wells. The pyramids are grown by epitaxial lateral overgrowth (ELO). Since the pyramid facets serve as growth template for the active region, their crystalline quality directly affects the emission efficiency and carrier dynamics of the InGaN layer. Therefore, GaN pyramids of different sizes grown on the same sample were examined by time dependent photoluminescence measurements.