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14:45 |
HL 81.1 |
Energetics of step-edges and adatom kinetics on m-plane GaN surfaces: Implications for surface roughening and in-plane growth anisotropy. — •Andrew Duff, Liverios Lymperakis, and Jörg Neugebauer
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15:00 |
HL 81.2 |
Electronic states at nonpolar GaN surfaces investigated by photoelectron spectroscopy and optical anisotropy spectroscopy — •Marcel Himmerlich, Anja Eisenhardt, Jochen Räthel, Eugen Speiser, Norbert Esser, and Stefan Krischok
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15:15 |
HL 81.3 |
Comparative study on Si and Ge doping in a- and c-plane GaN — •Matthias Wieneke, Hartmut Witte, Stephanie Fritze, Armin Dadgar, Jürgen Bläsing, and Alois Krost
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15:30 |
HL 81.4 |
Anisotropy of the optical response of nonpolar GaN in spectroscopic ellipsometry — •Karsten Lange, Christian Lidig, Martin Feneberg, Matthias Wieneke, Hartmut Witte, Armin Dadgar, Jürgen Bläsing, Alois Krost, and Rüdiger Goldhahn
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15:45 |
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Coffee break
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16:00 |
HL 81.5 |
Defects of polar, semipolar and nonpolar (In)GaN - a comparison — •Lukas Schade, Tim Wernicke, Kamran Forghani, Jens Raß, Simon Ploch, Lutz Kirste, Markus Weyers, Michael Kneissl, Ferdinand Scholz, and Ulrich Schwarz
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16:15 |
HL 81.6 |
Investigation of defect related luminescence features in semipolar AlGaN layers on GaN — •Ingo Tischer, Matthias Hocker, Manuel Frey, Robert A.R. Leute, Ferdinand Scholz, Willem van Mierlo, Johannes Biskupek, Ute Kaiser, and Klaus Thonke
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16:30 |
HL 81.7 |
Correlation of microscopic optical properties and defect structures of semipolar GaN on pre-patterned sapphire substrates by cathodoluminescence — •Sebastian Metzner, Frank Bertram, Thomas Hempel, Tobias Meisch, Stephan Schwaiger, Ferdinand Scholz, and Jürgen Christen
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16:45 |
HL 81.8 |
Structural and luminescence properties of defects in silicon doped a-plane GaN — •Gordon Schmidt, Peter Veit, Frank Bertram, Sebastian Metzner, Silke Petzold, Matthias Wieneke, Armin Dadgar, Alois Krost, and Jürgen Christen
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17:00 |
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Coffee break
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17:15 |
HL 81.9 |
Determination of In mole fraction and strain state in semi- and nonpolar InGaN layers by XRD — •Martin Frentrup, Simon Ploch, Tim Wernicke, and Michael Kneissl
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17:30 |
HL 81.10 |
Growth Studies on Submicrometer-sized GaN Stripes with Semipolar QWs — •Robert Anton Richard Leute, Junjun Wang, Tobias Meisch, and Ferdinand Scholz
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17:45 |
HL 81.11 |
Influence of the semipolar GaN template on the charge carrier dynamics in an active InGaN layer — •Jan Wagner, Sarah Schröder, Michael Jetter, and Peter Michler
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18:00 |
HL 81.12 |
Microphotoluminescence studies on the effect of V-pits and the surface orientation on the indium incorporation within InGaN quantum wells on free standing polar GaN — •Sebastian Bauer, Benjamin Neuschl, Ingo Tischer, Manuel Frey, Matthias Hocker, Robert A.R. Leute, SK. Shaid-Ur Rahman, Martin Klein, Ferdinand Scholz, and Klaus Thonke
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