HL 87: Goup IV elements and their compounds II
Donnerstag, 14. März 2013, 15:45–17:30, H15
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15:45 |
HL 87.1 |
Indirect to direct gap transition in strained and unstrained group-IV semiconductor alloys — Christian Eckhardt, •Kerstin Hummer, and Georg Kresse
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16:00 |
HL 87.2 |
Defect states at c-Si/a-Si3NxHy interfaces — •Leif Eric Hintzsche, Gerald Jordan, Martijn Marsman, Machteld Lamers, Arthur Weeber, and Georg Kresse
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16:15 |
HL 87.3 |
First stages of 4H-SiC crystal growth: ab initio study — •Elwira Wachowicz and Adam Kiejna
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16:30 |
HL 87.4 |
Reactive Ion Etching of Nano- and Ultrananocrystalline Diamond Films for Fabrication of Nanopillars — Christo Petkov, Emil Petkov, Florian Schnabel, Wilhelm Kulisch, Johann Peter Reithmaier, and •Cyril Popov
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16:45 |
HL 87.5 |
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations — •Kolja Kolata, Niko S. Köster, Alexey Chernikov, Michael J. Drexler, Eleonora Gatti, Stefano Cecchi, Daniel Chrastina, Giovanni Isella, Mario Guzzi, and Sangam Chatterjee
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17:00 |
HL 87.6 |
Photonic crystal microcavities for the luminescence enhancement of Si/Ge-Quantum dots around 1550nm wavelength — •Viktoriia Rutckaia, Benjamin Koehler, Vadim Talalaev, Frank Heyroth, and Joerg Schilling
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17:15 |
HL 87.7 |
Side-wall damage analysis of low-k interlayer dielectric from energy-filtered transmission electron microscopy — •Pradeep K. Singh, Sven Zimmermann, Steffen Schulze, Stefan Schulz, and Michael Hietschold
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