Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 89: Transport II
HL 89.2: Talk
Thursday, March 14, 2013, 17:00–17:15, H16
Analytical and numerical transistor models for carbon nanotubes under strain — •Christian Wagner1, Jörg Schuster2, and Thomas Gessner1,2 — 1Center for Microtechnologies, Chemnitz University of Technology, Chemnitz, Germany — 2Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany
Carbon nanotubes (CNTs) are objects attracting high interest in research and applications. While the physics of CNTs is understood quite well, the quantitative description of their properties within an application-environment is of huge interest.
Piezoresistive acceleration sensors are first upcoming applications of CNTs, where they are ideal candidates due to their mechanical strength and their outstanding piezoresistive response. In experiments, these kinds of sensors need an applied gate voltage to adjust the working point which may change i.e. due to adsorbed molecules on the CNT.
Therefore, we calculate the resistance of infinite CNTs under strain — with respect to different gate and drain-source voltages, but without regard to contacts. The Landauer approach is used and condensed into an analytical model. This yields a simplified description of the characteristics based on the band gaps of strained CNTs described in [1,2]. The different levels of theory – analytical and numerical – are investigated. This ends up in a fully parametric description of a CNT device. One of the results is that the sensing regime can be adjusted by the gate- and drain-source voltage.
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Wagner, C. et al., Phys. Stat. Sol. C, 2012, doi: 10.1002/pssb.201200113