Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 90: Poster Session: Quantum information systems; Optical properties; Ultrafast phenomena
HL 90.17: Poster
Thursday, March 14, 2013, 16:00–20:00, Poster A
Difference in structure and sulfur content of silicon, structured with shaped double femtosecond-laser pulses — •Anna Lena Baumann1, Kay-Michael Guenther2, Thomas Gimpel1, Stefan Kontermann1, and Wolfgang Schade1,2 — 1Fraunhofer Heinrich Hertz Institute, EnergieCampus, Am Stollen 19B, 38640 Goslar, Germany — 2Clausthal University of Technology, EFZN, EnergieCampus, Am Stollen 19B, 38640 Goslar
Double femtosecond-laser pulses of different pulse distances, shaped by a phase-only pulse shaper, were used to structure the surface of silicon under sulfur hexafluoride atmosphere. When using only one pulse per sample spot (pink silicon), the morphology changes decrease with growing pulse distance, as does the sulfur content in the sample. The absorption changes from single to double pulses, but stays the same in the visible and near infrared range for all investigated pulse distances. The relative sulfur content dependence is investigated with SIMS measurements, which indicate a dependence correlated with the morphology changes. Samples irradiated with 5 pulses per sample spot show a greater dependence on the double pulse distance in the visible as well as in the infrared wavelength range.