Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 91: Poster Session: Quantum dots and wires: preparation & characterization & optical properties & transport properties
HL 91.4: Poster
Donnerstag, 14. März 2013, 16:00–20:00, Poster A
Correlation of electrical and structural parameters of single GaAs nanowires grown by MBE onto silicon substrate — •Genziana Bussone1,2, Heiko Schäfer-Eberwein3, Emmanouil Dimakis4, Andreas Biermanns2, Lutz Geelhaar4, Peter Haring-Bolívar3, and Ullrich Pietsch2 — 1ESRF, Grenoble, France — 2Festkörperphysik, Universität Siegen, Germany — 3Hochfrequenztechnik & Quantenelektronik, Universität Siegen, Germany — 4PDI, Berlin, Germany
Semiconductor nanowires are possible candidates for future electronic application. Most of their properties strongly depend on structural parameters such as phase purity or lattice strain. Here we report on the correlation between electrical properties of single GaAs nanowires (NWs) grown by MBE on a highly doped silicon substrate (111) and their particular structural properties. Various single NWs, freestanding in their as-grown geometry onto the substrate, were measured using micromanipulators in a Focused Ion Beam (FIB) system at Siegen University (Germany), providing individual Current-Voltage characteristics. In order to understand the origin of the different electrical responses, the structure of the same nanowires were then investigated using a nano-focused beam of synchrotron radiation at beamline ID01 at the ESRF in Grenoble (France). All the NWs show mainly zinc-blende (ZB) structure units separated by stacking faults. The size of perfectly stacked ZB units differs among the measured NWs and correlates well with the differences of the respective Current-Voltage characteristics.