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HL: Fachverband Halbleiterphysik

HL 91: Poster Session: Quantum dots and wires: preparation & characterization & optical properties & transport properties

HL 91.6: Poster

Donnerstag, 14. März 2013, 16:00–20:00, Poster A

Growth of InAs/InGaAs nanowires on GaAs(111)B substrates — •Sven Scholz¹, Rüdiger Schott¹, Dirk Reuter², Arne Ludwig¹, and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum — ²Arbeitsgruppe für optoelektronische Materialien und Bauelemente, Universität Paderborn

To investigate the structure and behavior of individual 1D-quantum structures, so called nanowires, we have grown single localized Au seeded InAs/InGaAs nanowires on GaAs(111)B substrate by molecular beam epitaxy. The Au-seeds are implanted by focused ion beam (FIB) technology. We developed a AuGa-LMIS to avoid the beam spread induced by using a Wien-Filter, which allows us to reduce the spot size of the focused ion beam and as consequence the number of implanted ions necassary to seed a wire. At present the growth of InAs nanowires is not fully understood and we have been working on optimizing the process. We identified an optimal growth temperature and arsenic to indium ratio for nanowire growth. Further investigations also aim at analyzing the influence of the growth rates and growth directions. We studied the morphology of the nanowires by SEM imaging and the optical properties with photoluminescence spectroscopy.