Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: Structure and transport in organic photovoltaics; Photovoltaics; Impurities/Amorphous semiconductors; New materials
HL 92.7: Poster
Donnerstag, 14. März 2013, 16:00–20:00, Poster A
Investigating the infrared conversion efficiency of Black Silicon solar cells by measuring the differential spectral responsivity (DSR) — •Kay-Michael Günther1, Stefan Winter2, Thomas Gimpel3, Wolfgang Schade1,3, and Stefan Kontermann3 — 1Clausthal University of Technology, EFZN, Am Stollen 19B, 38640 Goslar, Germany — 2PTB Braunschweig, Bundesallee 100, 38116 Braunschweig, Germany — 3Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar, Germany
Exposing a silicon surface to femtosecond-laser pulses under a SF6 atmosphere leads to the incorporation of sulfur, which acts as a donor. After several pulses on the same spot, the surface becomes roughened. Therefore, with a single fabrication step, a pn-junction as well as a low reflecting surface can be created. This material is called Black Silicon. Previous works showed, that Black Silicon has a very high absorptance in the infrared region. It is believed, that high concentrations of sulfur states lead to the formation of an intraband within the bandgap.
To investigate the conversion efficiency of a Black Silicon Solar cell in the infrared, we measure the differential spectral responsivity in the range from 280 to 1200 nm. Compared to a standard high efficiency silicon solar cell, the Black Silicon cell of the same size exhibits a significantly increasing spectral responsivity above 1030 nm and even a higher spectral responsivity above 1150 nm.