Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 94: Quantum wires and nanocrystals: Optical properties

HL 94.2: Vortrag

Freitag, 15. März 2013, 09:45–10:00, H13

Optical properties and gas sensing capabilities of Ge and Si doped GaN nanowires — •Pascal Becker¹, Svenja van Heeswijk¹, Pascal Hille¹, Jörg Schörmann¹, Jörg Teubert², Sangam Chatterjee², Alexej Chernikov¹, and Martin Eickhoff¹ — ¹I.Physikalisches Institut, Justus-Liebig-Universität Gießen — ²Philipps-Universität Marburg, Fachbereich Physik

We report on the optical properties and the optical gas response of Si- and Ge-doped self-assembled GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy. GaN:Si and GaN:Ge NWs were grown on n-type Si(111) substrates with typical lengths of approx. 1.5 μm.

The NW ensembles were analyzed by temperature dependent and time resolved photoluminescence (PL) spectroscopy and the influence of Ge- and Si-doping was compared to undoped NW samples. Their emission properties are influenced by the doping concentration possibly by variation of the surface band bending (SBB).

Furthermore, the presence of oxidizing gases leads to a significant decrease of the PL-intensity. The doping concentration significantly influences this PL-quenching which will be interpreted in terms of SBB-variations.