Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 94: Quantum wires and nanocrystals: Optical properties

HL 94.3: Talk

Friday, March 15, 2013, 10:00–10:15, H13

Optical characterization of In(Ga)As/In(As)P nanowires with micro photoluminescence and absorption spectroscopy — •Michael M. Bormann, Julian Treu, Mengyu Liang, Simon Hertenberger, Stefanie Morkötter, Christian Grasse, Stephan Sprengel, Max Bichler, Markus-Christian Amann, Jonathan J. Finley, Gerhard Abstreiter, and Gregor Koblmüller — Walter Schottky Institut and Physik Department, TU München, Garching, Germany

In this work we present the optical properties of high-In content In(Ga)As nanowires (NW) and InAs/InAsP core-shell NWs grown by molecular beam epitaxy (MBE) and hybrid MBE-metal-organic vapor phase epitaxy on Si substrates. The emission characteristics of these NWs are measured either directly in free-standing geometry or after transfer in horizontal geometry by a specific micro photoluminescence (uPL) setup designed for the infrared spectral range. Both temperature and power-dependent measurements are performed highlighting the dynamics of the PL peak energy and intensities. The InGaAs NWs show a characteristic transition in PL peak energy with increasing Ga content and also with dominant wurtzite crystal phase [1]. In addition, we elucidate the effect of the InAsP shell thickness onto the intensity and near-band edge emission of InAs NWs. Furthermore, we present absorption measurements of homogeneous InGaAs NW arrays obtained with a UV/VIS/NIR setup. [1] S. Hertenberger, et al., Appl. Phys. Lett. 101, 043116 (2012).