Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 96: GaN: Growth and doping
HL 96.5: Talk
Friday, March 15, 2013, 10:30–10:45, H15
InGaN quantum wells grown on 2” semipolar GaN — •Tobias Meisch1, Sabine Schörner2, Junjun Wang1, Klaus Thonke2, and Ferdinand Scholz1 — 1Institut für Optoelektronik, Universität Ulm, 89081 Ulm — 2Institut für Quantenmaterie, Arbeitsgruppe Halbleiterphysik, Universität Ulm, 89081 Ulm
We have grown high quality (10-11) GaN and (11-22) GaN on (11-23) and (10-12) patterned sapphire respectively. The patterning of the substrate was done by reactive ion etching to produce periodic trenches about 1.5 µ m deep and 1.5 µm wide, revealing a c-plane-like facet on one side. All other facets are subsequently covered with SiO2 to inhibit epitaxial growth. In the following MOVPE process, GaN nucleates on this unmasked side facet, grows out of the trench and forms a coalesced semipolar surface. By decreasing the trench depth to 400 nm, we could reduce the RMS of the surface roughness by about a factor of two. First experiments on depositing InGaN quantum wells on the homogeneous GaN surface show much lower indium incorporation on the (11-22) plane as compared to the conventional c-plane. However, by a substantial increase of the indium flux, the QW emission could be shifted to 520 nm. Using comparable growth conditions, QWs on (10-11) GaN show an emission wavelength of 482 nm and a much higher intensity.