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HL: Fachverband Halbleiterphysik

HL 96: GaN: Growth and doping

HL 96.6: Vortrag

Freitag, 15. März 2013, 11:00–11:15, H15

Towards identification of the shallow donor oxygen in AlN photoluminescence spectra — •Martin Feneberg¹, Benjamin Neuschl², Klaus Thonke², Matthias Bickermann³, and Rüdiger Goldhahn¹ — ¹Abt. Materialphysik, Inst. für Exp. Physik, Otto-von-Guericke-Universität Magdeburg — ²Gruppe Halbleiterphysik, Inst. für Quantenmaterie, Universität Ulm — ³Leibniz-Institut für Kristallzüchtung, Berlin

In photoluminescence spectra of wurtzite AlN, several bound exciton emission bands can be observed. Recently, one of them could be identified as being related to substitutional silicon on aluminum site [1]. In this study, we present a correlation of secondary ion mass spectroscopy and photoluminescence at liquid helium temperature of a variety of AlN single crystals. From our analysis we tentatively assign a bound exciton line as being related to substitutional oxygen on nitrogen site. For this defect, DX center formation is expected, what is discussed in light of our experimental findings.

[1] B. Neuschl, et al. Phys. Stat. Sol. B 249, 511 (2012).