Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 96: GaN: Growth and doping

HL 96.7: Vortrag

Freitag, 15. März 2013, 11:15–11:30, H15

Activation of a new europium center in Europium-implanted GaN by both Mg and Si codoping — •Jayanta Kumar Mishra¹, Torsten Langer¹, Uwe Rossow¹, Stepan Shvarkov², Andreas Wieck², and Andreas Hangleiter¹ — ¹Institut für Angewandte Physik, TU Braunschweig — ²Angewandte Festkförperphysik,Ruhr-Universitfät Bochum, Germany

Rare earth ions implanted into GaN are promising for optoelectronic applications. They show luminescence in the visible range while the luminescence from this material system is sharper as well as independent of temperature due to intra 4f transition of rare earth ions. To improve the emission efficiency we implanted Europium in GaN codoped with Mg at dose range from 10⁹cm⁻² to 10¹⁴cm⁻² with an energy of 100 keV. The red emission from ⁵D₀→⁷F₂ of europium was remarkably enhanced by Mg codoping. It further enhances by both Mg and Si codoping. The typical Eu³⁺ luminescence in GaN at 2.000 eV (620 nm) is not found to be dominant. A new peak which is already present in europium-implanted Mg-doped GaN at 2.0047 eV (618.9 nm) is enhanced about ten times. This peak is found to be more than three times more intense than the typical 620 nm line of Mg-doped GaN:Eu. A new site dominates in the spectrum especially in the ⁵D₀→⁷F₂ transition range which is different from the sites present in undoped GaN:Eu. The excitation process of europium ions is proposed to take place through a donor-acceptor pair related energy transfer mechanism.